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US 12,707,902 B2Granted
Resistive random-access memory device
AssigneeUnited Microelectronics Corp.
InventorsChia-Ching Hsu, Wang Xiang, Shen-De Wang
Life of this patent
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Abstract
A RRAM (resistive random-access memory) device includes a bottom electrode line directly on a first metal structure, a top electrode island disposed beside the bottom electrode line, a resistive material sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island, and a cap layer covering a portion of the first metal structure and under the bottom electrode line.
Claims16
A resistive random-access memory (RRAM) device, comprising:
- a bottom electrode line directly on a first metal structure;
- a top electrode island disposed beside the bottom electrode line;
- a resistive material sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island;
- and
- a cap layer covering a portion of the first metal structure and under the bottom electrode line.
2 more elements
Dependencies are inferred from the claim text.