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US 12,622,184 B2Granted
Resistive switching device and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsWen-Jen Wang, Yu-Huan Yeh, Chuan-Fu Wang
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Abstract
A resistive switching device includes a substrate; a first dielectric layer on the substrate; a conductive via in the first dielectric layer; a bottom electrode on the conductive via and the first dielectric layer, a resistive switching layer on the bottom electrode; and a cone-shaped top electrode on the resistive switching layer. The cone-shaped top electrode can produce increased and concentrated electric field during operation, which facilitates the filament forming process.
Claims20
A resistive switching device, comprising:
- a substrate;
- a first dielectric layer on the substrate;
- a conductive via in the first dielectric layer;
- a bottom electrode on the conductive via and the first dielectric layer;
- a resistive switching layer on the bottom electrode;
- and
- a cone-shaped top electrode on the resistive switching layer and comprising a tip, wherein a bottom width of the cone-shaped top electrode is wider than a width of the tip.
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A method for forming a resistive switching device, comprising:
- providing a substrate;
- forming a first dielectric layer on the substrate;
- forming a conductive via in the first dielectric layer;
- forming a bottom electrode on the conductive via and the first dielectric layer;
- forming a resistive switching layer on the bottom electrode;
- and
- forming a cone-shaped top electrode on the resistive switching layer, wherein the cone-shaped top electrode comprises a tip, and wherein a bottom width of the cone-shaped top electrode is wider than a width of the tip.
4 more elements
Dependencies are inferred from the claim text.