Back to results
US 6,864,503 B2Granted
Spacer chalcogenide memory method and device
AssigneeMacronix International Co., Ltd.
InventorHsiang Lan Lung
Life of this patent
Estimating the term…
Abstract
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.
Claims17
A memory device, including:
- a multilayer structure, having a first electrode, an insulating layer over the first electrode and a second electrode over the insulating layer;
- wherein the multilayer structure defines a stack having sidewalls;
- and
- a programmable resistive material spacer along the sidewalls;
- wherein the programmable resistive material has at least two solid phases.
2 more elements
Dependencies are inferred from the claim text.