Resistive random-access memory device with step height difference
AssigneeInternational Business Machines Corporation
InventorsHiroyuki Miyazoe, Seyoung Kim, Asit Ray, Takashi Ando
Life of this patent
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Abstract
Techniques facilitating resistive random-access memory device with step height difference are provided. A resistive random-access memory device can comprise a first electrode located within a trench of a dielectric layer. The resistive random-access memory device can also comprise a metal oxide layer comprising a first section located within the trench of the dielectric layer, and a second section located over the first electrode, and over a barrier metal layer. Further, the resistive random-access memory device can comprise a second electrode located over the metal oxide layer.
Claims14
A resistive random-access memory device structure, comprising:
- a first electrode located within a trench of a dielectric layer, wherein the first electrode comprises a recessed portion;
- a metal oxide layer comprising a first section located within the recessed portion of the first electrode, and a second section located over the first electrode, and over and adjacent a barrier metal layer;
- and
- a second electrode located over and adjacent the metal oxide layer.
A resistive random-access memory device comprising:
- a first electrode located within a trench of a dielectric layer;
- a metal oxide layer comprising a first section located within the trench of the dielectric layer, and a second section located over the first electrode, and over and adjacent a barrier metal layer;
- and
- a second electrode located over and adjacent the metal oxide layer.
Dependencies are inferred from the claim text.