Electronic device comprising a memory circuit based on a phase change material

An electronic device comprising memory cells arranged in the form of an array of rows and columns, each memory cell including:

• a resistive heating element including a horizontal portion and a vertical portion, the vertical portion being in contact with the horizontal portion;
• and
• a layer made of a phase-change material, the layer of the phase-change material being common to the memory cells of a same row and covering a first surface of the resistive heating elements,
• each resistive heating element being covered by a first insulating spacer, the insulating spacer being in contact with a vertical flank of the vertical portion of the resistive heating element and with a first surface of the horizontal portion of the resistive heating element, each insulating spacer having a first, rounded surface opposite the vertical flank of the vertical portion, and
• the first insulating spacers covering two successive resistive heating elements of a same row, being separated by an insulating oxide layer, the insulating layer being in contact with the first, rounded surfaces of the insulating spacers.