Memory device having variable resistance material and method of manufacturing the same

A memory device comprising:

• a gate stack on a substrate, comprising a plurality of insulation layers and a plurality of gate electrodes that are alternately stacked in a vertical direction, and defining a through hole in the vertical direction;
• a plurality of channel portions in the through hole to face the gate electrodes;
• a plurality of conductive layers in the through hole to face the insulation layers;
• and
• a variable resistance material layer on first sidewalls of the channel portions and second sidewalls of the conductive layers, the variable resistance material layer in the through hole, and extending in the vertical direction, wherein
• a bottom surface of at least one of the plurality of conductive layers contacts with a top surface of at least one of the plurality of channel portions.

A memory device comprising:

• a gate stack on a substrate, comprising a plurality of insulation layers and a plurality of gate electrodes alternately stacked in a vertical direction, and defining a through hole extending in the vertical direction;
• a pillar structure in the through hole and comprising,
• a plurality of channel portions in the through hole to face the gate electrodes,
• a plurality of conductive layers in the through hole, in the vertical direction alternately with the channel portions, and comprising at least one of a metal or a metal nitride, and
• a variable resistance material layer on inner walls of the channel portions and inner walls of the conductive layers, in the through hole;
• the memory device further comprising a bit line plug on a top surface of the pillar structure;
• and
• a bit line disposed on the bit line plug.