H10N 70/828
Current flow limiting means within the switching material region
Official title: {Current flow limiting means within the switching material region, e.g. constrictions}
H10N70/828 (Current flow limiting means within the switching material region) appears on 539 US grants and 608 published applications in this corpus.
Search patents in H10N- Granted patents
- 539
- Published applications
- 608
- Assignees
- 137
- Inventors
- 862
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 5 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 4 |
| 2003 | 2 | 4 |
| 2004 | 5 | 6 |
| 2005 | 5 | 9 |
| 2006 | 2 | 15 |
| 2007 | 6 | 15 |
| 2008 | 8 | 27 |
| 2009 | 9 | 19 |
| 2010 | 23 | 32 |
| 2011 | 27 | 26 |
| 2012 | 25 | 19 |
| 2013 | 21 | 27 |
| 2014 | 26 | 38 |
| 2015 | 43 | 31 |
| 2016 | 43 | 43 |
| 2017 | 32 | 47 |
| 2018 | 37 | 37 |
| 2019 | 36 | 53 |
| 2020 | 49 | 36 |
| 2021 | 39 | 35 |
| 2022 | 21 | 29 |
| 2023 | 25 | 22 |
| 2024 | 18 | 14 |
| 2025 | 20 | 12 |
| 2026 | 5 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Phase change memory device12 May 2026US 12,628,574 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Neural network hardware device and system31 Mar 2026US 12,592,279 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Phase change memory, electronic device, and preparation method for phase change memory31 Mar 2026US 12,593,622 B2Huawei Technologies Co., Ltd.
- Structure and method for memory element to confine metal with spacer24 Mar 2026US 12,588,428 B2GLOBALFOUNDRIES U. S. Inc.
- Phase change material switch device and related methods13 Jan 2026US 12,527,235 B2Infineon Technologies AG
- Variable resistive semiconductor memory device having a barrier layer6 Aug 2026US 2026/0231693 A1SK hynix Inc.
- Semiconductor device28 May 2026US 2026/0150591 A1SK hynix Inc.
- Resistive random-access memory devices with engineered electronic defects and methods for making the same19 Mar 2026US 2026/0082824 A1TetraMem Inc.
- Rram with post-patterned treated memory films and methods for forming the same19 Mar 2026US 2026/0082826 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Rram crossbar array circuits with specialized interface layers for low current operation19 Mar 2026US 2026/0082827 A1TetraMem Inc.
Most cited
By later US patents
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Method of making an integrated circuit electrode having a reduced contact area454US 6,117,720 AMicron Technology, Inc. · 2000
- Method for making small pore for use in programmable resistance memory element423US 6,613,604 B2Ovonyx, Inc. · 2003
- Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories408US 5,814,527 AMicron Technology, Inc. · 1998
- Composite memory material comprising a mixture of phase-change memory material and dielectric material389US 5,825,046 AEnergy Conversion Devices, Inc. · 1998