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US 6,613,604 B2Granted
Method for making small pore for use in programmable resistance memory element
AssigneeOvonyx, Inc.
InventorsJon Maimon, Patrick Klersy
Life of this patent
Estimating the term…
Abstract
A method for making a small pore. The defined pore is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
Claims12
A method of fabricating a programmable resistance memory element, comprising:
- providing a layer of a first material;
- forming a layer of a second material over said layer of said first material;
- forming a layer of a third material over said layer of said second material;
- forming an opening in said third material to expose said second material but without removing substantially any of said of said second material;
- forming a sidewall spacer of a fourth material on a sidewall surface of said opening of said third material;
- forming an opening in said second material to expose said first material;
- and
- forming a layer of a programmable resistance material in said opening of said second material, said programmable resistance material being in direct contact with said first material.
5 more elements
Dependencies are inferred from the claim text.