Back to results
US 2026/0150591 A1Published application
Semiconductor device
AssigneeSK hynix Inc.
InventorYoung Jae KWON
Life of this patent
Estimating the term…
Abstract
A semiconductor device may comprise a first electrode, a second electrode on the first electrode, a resistance change layer between the first electrode and the second electrode, an oxygen reservoir layer disposed between the resistance change layer and the second electrode and including yttria-stabilized zirconia (YSZ), and a porous material layer, contacting the oxygen reservoir layer and including a pore, and positioned on the resistance change layer.
Claims19
A semiconductor device, comprising:
- a first electrode;
- a second electrode on the first electrode;
- a resistance change layer between the first electrode and the second electrode;
- an oxygen reservoir layer disposed between the resistance change layer and the second electrode and including yttria-stabilized zirconia (YSZ);
- and
- a porous material layer, contacting the oxygen reservoir layer and including a pore, and disposed on the resistance change layer.
3 more elements
A semiconductor device, comprising:
- a first conductive line;
- a second conductive line spaced apart from the first conductive line and crossing the first conductive line;
- and
- a pillar structure disposed in an area where the first conductive line and the second conductive line cross each other, wherein the pillar structure includes:
- a first electrode;
- a second electrode on the first electrode;
- a resistance change layer between the first electrode and the second electrode;
- an oxygen reservoir layer disposed between the resistance change layer and the second electrode and including yttria-stabilized zirconia (YSZ);
- and
- a porous material layer, contacting the oxygen reservoir layer and including a pore, and disposed on the resistance change layer.
7 more elements
A semiconductor device, comprising:
- a first electrode;
- a second electrode on the first electrode;
- a resistance change layer between the first electrode and the second electrode;
- an oxygen reservoir layer disposed between the resistance change layer and the second electrode;
- and
- a metal-organic framework including a pore, disposed on the resistance change layer and contacting the oxygen reservoir layer,
- wherein the oxygen reservoir layer fills the pore.
4 more elements
Dependencies are inferred from the claim text.