Method of making an integrated circuit electrode having a reduced contact area
AssigneeMicron Technology, Inc.
InventorSteven T. Harshfield
Life of this patent
Estimating the term…
Abstract
A method and an apparatus for manufacturing a memory cell having a non-volatile resistive memory element with a limited size active area. The method comprises a first step of providing a dielectric volume and forming a plug opening within the dielectric volume. A recessed plug of a conductive material is then formed within a lower portion of the opening and a dielectric spacer is formed along the sidewalls of an upper portion of the opening. The spacer is cylindrical and has a central hole. A contact plug is subsequently formed within the central hole, the contact plug electrically coupled to the recessed plug. The contact plug can include a memory element or an additional memory element can be applied over the contact plug.
Claims18
A method for manufacturing an electrode assembly, the method comprising the steps of:
- forming a dielectric volume;
- forming a plug opening within said dielectric volume;
- forming a recessed plug of a conductive material within said plug opening;
- forming a spacer within said plug opening to define a contact opening;
- and
- forming a contact member of a memory material within said contact opening, said contact member electrically coupled to said recessed plug.
A method for manufacturing a memory cell, the method comprising the steps of:
- providing a dielectric volume;
- forming a plug opening within said dielectric volume, said plug opening defined in part by sidewalls;
- forming a recessed plug of a conductive material within a lower portion of said opening, the recessed plug configured for coupling to an access device;
- forming a spacer along said sidewalls of said opening, said spacer defining an aperture;
- forming a contact member within said aperture, said contact member electrically coupled to said recessed plug;
- and
- disposing a memory-storage material over said contact member.
A method for manufacturing a memory cell, the method comprising:
- providing a dielectric member;
- forming a first aperture in the dielectric member, said first aperture having a first portion and a second portion;
- disposing a first conductive member within the first portion of the first aperture;
- forming a dielectric spacer within the second portion of the first aperture to define a second aperture within the second portion of the first aperture;
- and
- disposing a memory material within the second aperture, the memory material being electrically coupled to the first conductive member.
Dependencies are inferred from the claim text.