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US 5,814,527 AGranted
Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
AssigneeMicron Technology, Inc.
InventorsGraham R. Wolstenholme, Steven T. Harshfield, Raymond A. Turi, Fernando Gonzalez, Guy T. Blalock, Donwon Park
Life of this patent
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Abstract
A method for fabricating an ultra-small pore or contact for use in chalcogenide memory cells specifically and in semiconductor devices generally in which disposable spacers are utilized to fabricate ultra-small pores or contacts. The pores thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.
Claims38
A method of fabricating a pore, comprising:
- applying a layer of a first material onto a substrate material;
- forming an edge feature in said layer of said first material;
- applying a layer of a second material onto said edge feature of said layer of said first material;
- applying a layer of a third material onto said layer of said second material;
- removing a portion of said layer of said third material;
- and
- removing a portion of said layer of said second material to define a pore in said layer of said second material.
4 more elements
A method of fabricating a pore, comprising:
- applying a layer of a first material onto a substrate material;
- applying a layer of a second material onto said layer of said first material;
- forming an edge feature in said layer of said second material;
- forming an edge feature in said layer of said first material;
- applying a layer of a third material onto said edge features of said layers of said first and second materials;
- removing a portion of said layer of said third material;
- and
- removing a portion of said layer of said first material to define a pore in said layer of said first material.
5 more elements
A method of fabricating a pore, comprising:
- applying a layer of a first material onto a substrate material;
- applying a layer of a second material onto said layer of said first material;
- applying a layer of a third material onto said layer of said second material;
- forming an edge feature in said layer of said third material;
- applying a layer of a fourth material onto said edge feature of said layer of said third material;
- removing a portion of said layer of said fourth material;
- removing a portion of said layer of said second material to define a pore in said layer of said second material;
- and
- removing a portion of said layer of said first material to define a pore in said layer of said first material.
6 more elements
A method of fabricating a chalcogenide memory cell, comprising:
- applying a layer of a first material onto a conductive substrate material;
- forming an edge feature in said layer of said first material;
- applying a layer of a insulative material onto said edge feature of said layer of said first material;
- applying a layer of a third material onto said layer of said insulative material;
- removing a portion of said layer of said third material;
- removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material;
- applying a layer of a chalcogenide material into said pore;
- and
- applying a layer of a conductive material onto said layer of said chalcogenide material.
6 more elements
A method of fabricating a chalcogenide memory cell, comprising:
- applying a layer of a insulative material onto a conductive substrate material;
- applying a layer of a second material onto said layer of said insulative material;
- forming an edge feature in said layer of said second material;
- forming an edge feature in said layer of said insulative material;
- applying a layer of a third material onto said edge features of said layers of said insulative and second materials;
- removing a portion of said layer of said third material;
- removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material;
- applying a layer of a chalcogenide material into said pore;
- and
- applying a layer of a conductive material onto said layer of said chalcogenide material.
7 more elements
A method of fabricating a chalcogenide memory cell, comprising:
- applying a layer of an insulative material onto a conductive substrate material;
- applying a layer of a second material onto said layer of said insulative material;
- applying a layer of a third material onto said layer of said second material;
- forming an edge feature in said layer of said third material;
- applying a layer of a fourth material onto said edge feature of said layer of said third material;
- removing a portion of said layer of said fourth material;
- removing a portion of said layer of said second material to define a pore in said layer of said second material;
- removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material;
- applying a layer of a chalcogenide material into said pore in said layer of said insulative material;
- and
- applying a layer of a conductive material onto said layer of said chalcogenide material.
8 more elements
Dependencies are inferred from the claim text.