Rram crossbar array circuits with specialized interface layers for low current operation
AssigneeTetraMem Inc.
InventorsMinxian Zhang, Ning Ge
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Abstract
Technologies relating to RRAM crossbar array circuits with specialized interface layers for the low current operations are disclosed. An example apparatus includes: a substrate; a bottom electrode formed on the substrate; a first layer formed on the bottom electrode; an RRAM oxide layer formed on the first layer and the bottom electrode; and a top electrode formed on the RRAM oxide layer. The first layer may be a continuous layer or a discontinuous layer. The apparatus may further comprise a second layer formed between the RRAM oxide layer and the top electrode. The second layer may be a continuous layer or a discontinuous layer.
Claims20
A resistive random-access memory (RRAM) stack, comprising:
- a bottom electrode;
- a first interface layer on the bottom electrode, wherein the first interface layer comprises at least one of Al2O3, SiO2, Si3N4, AlN, or glass;
- a resistive random-access memory (RRAM) oxide layer on the first interface layer;
- and
- a top electrode on the RRAM oxide layer.
A method for fabricating a resistive random-access memory stack, comprising:
- forming, on a bottom electrode, a first interface layer, wherein the first interface layer comprises at least one of Al2O3, SiO2, Si3N4, AlN, or glass;
- forming a resistive random-access memory (RRAM) oxide layer on the first interface layer;
- and
- forming a top electrode on the RRAM oxide layer.
Dependencies are inferred from the claim text.