Back to results
US 12,628,574 B2Granted
Phase change memory device
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsGabriele Navarro, Chiara Sabbione, Guillaume Bourgeois, Anna-Lisa Serra
Life of this patent
Estimating the term…
Abstract
A phase change memory device comprising, between first and second electrodes: a first layer of a phase change material; and a second germanium nitride-based layer, in contact with the first layer, the nitrogen percentage in the second layer being between 20% and 35%, and the second layer having a channel of the phase change material of the first layer passing through it.
Claims12
A phase change memory device comprising, between first and second electrodes:
- a first layer of a phase change material;
- and
- a second, germanium nitride-based layer, in contact with the first layer, with the atomic nitrogen percentage in the second layer being between 20% and 35% and the second layer having a channel of the phase change material of the first layer passing through it;
- wherein the second layer comprises first and second sublayers in contact with each other, the first sublayer having a nitrogen percentage different from the nitrogen percentage in the second sublayer;
- wherein the second layer comprises one or more further sublayers, and each of the first, second and further sublayers has a nitrogen percentage different from the nitrogen percentages of the other sublayers of the second layer;
- wherein the second layer comprises at least one intermediate sublayer between two other sublayers, the nitrogen percentage of the intermediate sublayer being greater than the nitrogen percentage of the other sublayers.
3 more elements
Dependencies are inferred from the claim text.