Rram with post-patterned treated memory films and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWatson Liu, Fu-Ting Sung, Hsia-Wei Chen, Yu-Wen Liao, Wen-Ting Chu
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Abstract
A semiconductor structure includes a first electrode comprising a first metallic material; a memory film including at least one dielectric metal oxide material and contacting the first electrode; and a second electrode comprising a second metallic material and contacting the memory film. The memory film includes a center region having a first average atomic ratio of a passivation element to oxygen that is less than 0.01, and includes a peripheral region having a second average atomic ratio of the passivation element to oxygen that is greater than 0.05.
Claims20
A semiconductor structure comprising:
- a first electrode comprising a first metallic material;
- a memory film comprising at least one filament-forming dielectric metal oxide material and contacting the first electrode, wherein the memory film comprises a center region and a peripheral region having a different material composition than the center region;
- a second electrode comprising a second metallic material and contacting the memory film;
- and
- an insulating spacer laterally surrounding the second electrode.
A semiconductor structure comprising:
- a two-dimensional array of memory cells overlying a substrate and electrically connected to a two-dimensional array of access transistors located on the substrate via metal interconnect structures within dielectric material layers, each memory cell within the two-dimensional array of memory cells comprising:
- a respective first electrode;
- a respective memory film comprising a respective center region and a respective peripheral region having a material composition variation therein;
- a respective second electrode;
- and
- a respective insulating spacer laterally surrounding the respective second electrode.
A semiconductor structure comprising:
- a first electrode comprising a first metallic material;
- a memory film comprising a layer stack including a first dielectric metal oxide material and a second dielectric metal oxide material and contacting the first electrode, wherein the memory film comprises a center region and a peripheral region having a material composition variation therein;
- a second electrode comprising a second metallic material and contacting the memory film;
- and
- an insulating spacer laterally surrounding the second electrode.
Dependencies are inferred from the claim text.