H10N 70/861
Thermal details
Official title: {Thermal details}
H10N70/861 (Thermal details) appears on 697 US grants and 847 published applications in this corpus.
Search patents in H10N- Granted patents
- 697
- Published applications
- 847
- Assignees
- 154
- Inventors
- 1,006
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 1 |
| 2002 | 1 | 1 |
| 2003 | 3 | 10 |
| 2004 | 6 | 8 |
| 2005 | 5 | 9 |
| 2006 | 6 | 25 |
| 2007 | 10 | 39 |
| 2008 | 17 | 31 |
| 2009 | 17 | 37 |
| 2010 | 45 | 28 |
| 2011 | 33 | 26 |
| 2012 | 29 | 25 |
| 2013 | 31 | 36 |
| 2014 | 32 | 35 |
| 2015 | 37 | 30 |
| 2016 | 34 | 45 |
| 2017 | 37 | 34 |
| 2018 | 32 | 30 |
| 2019 | 29 | 26 |
| 2020 | 79 | 97 |
| 2021 | 39 | 34 |
| 2022 | 26 | 40 |
| 2023 | 31 | 60 |
| 2024 | 31 | 62 |
| 2025 | 52 | 46 |
| 2026 | 33 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change memory cell sidewall heater15 Sep 2026US 12,740,334 B2International Business Machines Corporation
- Phase change material switch with reduced insertion loss and methods for forming the same15 Sep 2026US 12,740,335 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and fabrication of PCM-based capacitor bank15 Sep 2026US 12,740,343 B2Taiwan Semiconductor Manufacturing Comany, Ltd.
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material radio-frequency device and methods for forming the same1 Oct 2026US 2026/0305187 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material switch with improved thermal dissipation and methods for forming the same1 Oct 2026US 2026/0305188 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and fabrication of pcm-based capacitor bank24 Sep 2026US 2026/0293540 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Bromine containing silicon precursors for encapsulation layers440US 9,865,815 B2Lam Research Corporation · 2018
- Phase change material memory device435US 6,586,761 B2Intel Corporation · 2003
- Memory element with energy control mechanism416US 5,933,365 AEnergy Conversion Devices, Inc. · 1999
- Multiple layer phrase-change memory294US 6,674,115 B2Intel Corporation · 2004
- Phase change memory device employing thermally insulating voids286US 6,815,704 B1Silicon Storage Technology, Inc. · 2004