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US 6,674,115 B2Granted
Multiple layer phrase-change memory
AssigneeIntel Corporation
InventorsStephen J. Hudgens, Tyler A. Lowrey, Patrick J. Klersy
Life of this patent
Estimating the term…
Abstract
A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.
Claims4
A system comprising:
- a digital signal processor;
- and
- a memory coupled to said digital signal processor, said memory including a first layer of a phase-change material, a second layer of a phase-change material, and a non-phase-change material between said first and second layers, said non-phase-change material completely separating said first layer from said second layer.
Dependencies are inferred from the claim text.