H10N 70/8616
Thermal insulation means
Official title: {Thermal insulation means}
H10N70/8616 (Thermal insulation means) appears on 274 US grants and 317 published applications in this corpus.
Search patents in H10N- Granted patents
- 274
- Published applications
- 317
- Assignees
- 73
- Inventors
- 464
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 7 |
| 2004 | 4 | 5 |
| 2005 | 3 | 6 |
| 2006 | 1 | 13 |
| 2007 | 4 | 24 |
| 2008 | 14 | 17 |
| 2009 | 12 | 16 |
| 2010 | 25 | 8 |
| 2011 | 16 | 17 |
| 2012 | 13 | 9 |
| 2013 | 11 | 8 |
| 2014 | 15 | 17 |
| 2015 | 15 | 14 |
| 2016 | 12 | 15 |
| 2017 | 14 | 15 |
| 2018 | 13 | 14 |
| 2019 | 11 | 10 |
| 2020 | 29 | 27 |
| 2021 | 11 | 7 |
| 2022 | 6 | 13 |
| 2023 | 7 | 26 |
| 2024 | 12 | 14 |
| 2025 | 19 | 9 |
| 2026 | 5 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Lateral phase change memory cell21 Apr 2026US 12,610,751 B2International Business Machines Corporation
- Memory cell, semiconductor device having the same, and methods of manufacturing the same14 Apr 2026US 12,604,676 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Vertical phase change switch utilizing a thermally conductive sidewall dielectric for high-efficiency heating14 Apr 2026US 12,604,678 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory devices17 Mar 2026US 12,581,660 B2Samsung Electronics Co., Ltd.
- Diffusion barrier to mitigate direct-shortage leakage in conductive bridging ram (CBRAM)10 Feb 2026US 12,550,633 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Vertical phase change switch devices and methods20 Aug 2026US 2026/0247876 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory cell, semiconductor device having the same, and methods of manufacturing the same16 Jul 2026US 2026/0206498 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor memory device including forming conductive line25 Jun 2026US 2026/0181913 A1Samsung Electronics Co., Ltd.
- Semiconductor structure and fabrication method thereof18 Jun 2026US 2026/0173405 A1Peking University
- Semiconductor device including resistance change layer and thermal confinement electrode layer22 Jan 2026US 2026/0026268 A1SK hynix Inc.
Most cited
By later US patents
- Bromine containing silicon precursors for encapsulation layers440US 9,865,815 B2Lam Research Corporation · 2018
- Phase change material memory device435US 6,586,761 B2Intel Corporation · 2003
- Memory element with energy control mechanism416US 5,933,365 AEnergy Conversion Devices, Inc. · 1999
- Phase change memory device employing thermally insulating voids286US 6,815,704 B1Silicon Storage Technology, Inc. · 2004
- Phase change memory252US 6,791,102 B2Intel Corporation · 2004