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US 6,791,102 B2Granted
Phase change memory
AssigneeIntel Corporation
InventorsBrian G. Johnson, Charles H. Dennison
Life of this patent
Estimating the term…
Abstract
Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a phase change material having a bottom portion, a lateral portion, and a top portion. The phase change memory may further include a first electrode material contacting the bottom portion and the lateral portion of the phase change material and a second electrode material contacting the top portion of the phase change material.
Claims19
An apparatus, comprising:
- a phase change material having a bottom portion, a top portion, and a lateral portion extending from the bottom portion to the top portion;
- a first electrode material contacting the bottom portion and the lateral portion of the phase change material;
- and
- a second electrode material contacting the top portion of the phase change material.
1 more element
A system, comprising:
- a processor;
- a wireless interface coupled to the processor;
- and
- a memory coupled to the processor, the memory including:
- a phase change material having a bottom portion, a top portion, and a lateral portion extending from the bottom portion to the top portion;
- a first electrode material contacting the bottom portion and the lateral portion of the phase change material;
- and
- a second electrode material contacting the top portion of the phase change material.
5 more elements
Dependencies are inferred from the claim text.