H10N 70/8613
Heating or cooling means other than resistive heating electrodes
Official title: {Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel}
H10N70/8613 (Heating or cooling means other than resistive heating electrodes) appears on 371 US grants and 457 published applications in this corpus.
Search patents in H10N- Granted patents
- 371
- Published applications
- 457
- Assignees
- 106
- Inventors
- 552
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 3 |
| 2005 | 2 | 3 |
| 2006 | 4 | 10 |
| 2007 | 4 | 9 |
| 2008 | 4 | 13 |
| 2009 | 7 | 16 |
| 2010 | 14 | 12 |
| 2011 | 11 | 9 |
| 2012 | 14 | 11 |
| 2013 | 15 | 22 |
| 2014 | 12 | 8 |
| 2015 | 17 | 16 |
| 2016 | 20 | 28 |
| 2017 | 22 | 17 |
| 2018 | 15 | 12 |
| 2019 | 20 | 13 |
| 2020 | 52 | 71 |
| 2021 | 26 | 22 |
| 2022 | 15 | 23 |
| 2023 | 21 | 34 |
| 2024 | 18 | 45 |
| 2025 | 33 | 35 |
| 2026 | 25 | 25 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change memory cell sidewall heater15 Sep 2026US 12,740,334 B2International Business Machines Corporation
- Structure and fabrication of PCM-based capacitor bank15 Sep 2026US 12,740,343 B2Taiwan Semiconductor Manufacturing Comany, Ltd.
- Phase-change material (PCM) radio frequency (RF) switching device with novel spreader design1 Sep 2026US 12,727,397 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0314271 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material radio-frequency device and methods for forming the same1 Oct 2026US 2026/0305187 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material switch with improved thermal dissipation and methods for forming the same1 Oct 2026US 2026/0305188 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and fabrication of pcm-based capacitor bank24 Sep 2026US 2026/0293540 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Phase-change memory cell and method of fabricating the phase-change memory cell214US 6,936,840 B2International Business Machines Corporation · 2005
- Phase change memory devices, method for encoding, and methods for storing data143US 9,093,141 B2Intermec IP Corp. · 2015
- Method to make phase-change material RF switches with thermal dielectrics91US 9,368,720 B1HRL Laboratories, LLC · 2016
- Hybrid MOS-PCM CMOS SOI switch75US 9,917,104 B1Newport Fab, LLC · 2018
- Phase change material switch and method of making the same72US 9,257,647 B2Northrop Grumman Systems Corporation · 2016