Phase-change memory cell and method of fabricating the phase-change memory cell
AssigneeInternational Business Machines Corporation
InventorsJonathan Zanhong Sun, Simone Raoux, Hemantha Wichramasinghe
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Abstract
A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
Claims15
A memory cell, comprising:
- an insulating layer formed on a first electrode layer, said insulating layer having a first opening;
- a stencil layer formed on said insulating layer, and having a second opening formed in an area of said first opening;
- a phase-change material layer formed on a surface of said first electrode layer in said first opening;
- and
- an electrically conductive layer comprising a first portion formed on said stencil layer and defining a second electrode layer, and a second portion formed on said phase-change material layer.
Dependencies are inferred from the claim text.