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US 9,368,720 B1Granted
Method to make phase-change material RF switches with thermal dielectrics
AssigneeHRL Laboratories, LLC
InventorsJeong-Sun Moon, Hwa-Chang Seo
Life of this patent
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Abstract
A switch includes an input port, an output port, a phase change material coupled between the input port and the output port, a heater, and a thermal dielectric layer in between the heater and the phase change material, and in contact with the heater and the phase change material. The thermal dielectric layer provides thermal conduction between the phase change material and the heater, and the thermal dielectric layer is nonmetallic and electrically non-conductive and includes polycrystalline AlN, diamond, or SiC.
Claims20
A switch comprising:
- an input port;
- an output port;
- a phase change material coupled between the input port and the output port;
- a heater;
- and
- a thermal dielectric layer in between the heater and the phase change material, and in contact with the heater and the phase change material;
- wherein the thermal dielectric layer provides thermal conduction between the phase change material and the heater;
- and
- wherein the thermal dielectric layer is nonmetallic and electrically non-conductive and comprises polycrystalline AlN, or diamond.
6 more elements
A method of fabricating a switch, the method comprising:
- providing a heater coupled to a substrate;
- forming a thermal dielectric layer on the heater;
- forming phase change material on the thermal dielectric layer;
- forming an input port in contact with the phase change material;
- and
- forming an output port in contact with the phase change material, wherein the output port is not in contact with the input port;
- wherein the thermal dielectric layer provides thermal conduction between the phase change material and the heater;
- and
- wherein the thermal dielectric layer is nonmetallic and electrically non-conductive and comprises polycrystalline AlN, or diamond.
6 more elements
Dependencies are inferred from the claim text.