H10N 70/841
Electrodes
Official title: {Electrodes}
H10N70/841 (Electrodes) appears on 4,675 US grants and 5,517 published applications in this corpus.
Search patents in H10N- Granted patents
- 4,675
- Published applications
- 5,517
- Assignees
- 516
- Inventors
- 4,392
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 5 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 5 | 0 |
| 2001 | 3 | 1 |
| 2002 | 9 | 25 |
| 2003 | 30 | 57 |
| 2004 | 33 | 75 |
| 2005 | 43 | 87 |
| 2006 | 56 | 148 |
| 2007 | 59 | 164 |
| 2008 | 87 | 210 |
| 2009 | 101 | 191 |
| 2010 | 182 | 201 |
| 2011 | 203 | 211 |
| 2012 | 166 | 221 |
| 2013 | 229 | 256 |
| 2014 | 291 | 322 |
| 2015 | 348 | 330 |
| 2016 | 341 | 307 |
| 2017 | 276 | 263 |
| 2018 | 231 | 226 |
| 2019 | 268 | 321 |
| 2020 | 329 | 427 |
| 2021 | 330 | 331 |
| 2022 | 269 | 316 |
| 2023 | 225 | 259 |
| 2024 | 204 | 218 |
| 2025 | 216 | 200 |
| 2026 | 122 | 150 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device including ferroelectric memory cell with doped ferroelectric layer6 Oct 2026US 12,755,782 B2SK Hyinx Inc.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- Semiconductor device with self-selecting memory layer29 Sep 2026US 12,751,217 B2SK hynix Inc.
- Diode device with programmable conducting current and array preparation method thereof29 Sep 2026US 12,751,218 B2Zhejiang University
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Novel pcm device8 Oct 2026US 2026/0314270 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Resistive random-access memory (rram) devices with electrodes containing ruthenium alloys8 Oct 2026US 2026/0314274 A1TetraMem Inc.
- Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells1 Oct 2026US 2026/0303097 A1iCometrue Company Ltd.
- Bottom electrode structure in memory device1 Oct 2026US 2026/0305185 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000
- Method of making an integrated circuit electrode having a reduced contact area454US 6,117,720 AMicron Technology, Inc. · 2000