H10N 70/8413
Adapted for resistive heating
Official title: {adapted for resistive heating}
H10N70/8413 (Adapted for resistive heating) appears on 1,242 US grants and 1,551 published applications in this corpus.
Search patents in H10N- Granted patents
- 1,242
- Published applications
- 1,551
- Assignees
- 193
- Inventors
- 1,349
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 4 | 15 |
| 2003 | 17 | 30 |
| 2004 | 19 | 34 |
| 2005 | 20 | 45 |
| 2006 | 22 | 81 |
| 2007 | 33 | 117 |
| 2008 | 47 | 115 |
| 2009 | 61 | 105 |
| 2010 | 103 | 98 |
| 2011 | 114 | 69 |
| 2012 | 58 | 67 |
| 2013 | 62 | 55 |
| 2014 | 77 | 64 |
| 2015 | 59 | 58 |
| 2016 | 60 | 59 |
| 2017 | 52 | 46 |
| 2018 | 46 | 49 |
| 2019 | 49 | 55 |
| 2020 | 72 | 96 |
| 2021 | 66 | 53 |
| 2022 | 40 | 56 |
| 2023 | 43 | 65 |
| 2024 | 39 | 56 |
| 2025 | 48 | 34 |
| 2026 | 29 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Phase change memory cell sidewall heater15 Sep 2026US 12,740,334 B2International Business Machines Corporation
- Structure and fabrication of PCM-based capacitor bank15 Sep 2026US 12,740,343 B2Taiwan Semiconductor Manufacturing Comany, Ltd.
- Phase change material switch with ovonic threshold switching material selector and methods for forming the same8 Sep 2026US 12,733,411 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Spike-timing-dependent plasticity using inverse resistivity phase-change material1 Sep 2026US 12,727,396 B2International Business Machines Corporation
- Radio frequency switch18 Aug 2026US 12,713,840 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Phase change material radio-frequency switch for low power consumption and methods for forming the same1 Oct 2026US 2026/0305186 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material radio-frequency device and methods for forming the same1 Oct 2026US 2026/0305187 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material switch with improved thermal dissipation and methods for forming the same1 Oct 2026US 2026/0305188 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and fabrication of pcm-based capacitor bank24 Sep 2026US 2026/0293540 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic device comprising a memory circuit based on a phase change material17 Sep 2026US 2026/0282766 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Thin-film structure for chalcogenide electrical switching devices and process therefor556US 5,177,567 AEnergy Conversion Devices, Inc. · 1993
- Bromine containing silicon precursors for encapsulation layers440US 9,865,815 B2Lam Research Corporation · 2018
- Method to enhance performance of thermal resistor device430US 6,339,544 B12002
- Method for making small pore for use in programmable resistance memory element423US 6,613,604 B2Ovonyx, Inc. · 2003
- Memory element with energy control mechanism416US 5,933,365 AEnergy Conversion Devices, Inc. · 1999