Spike-timing-dependent plasticity using inverse resistivity phase-change material

A device, comprising:

• an inverse phase-change material element having a resistive crystalline phase and a conductive amorphous phase;
• a first electrode disposed on a first surface of the inverse phase-change material element;
• a second electrode disposed on a second surface of the inverse phase-change material element;
• a first proximity heater embedded in the first electrode;
• a second proximity heater embedded in the second electrode;
• a first event pulse generator coupled to the first proximity heater;
• and
• a second event pulse generator coupled to the second proximity heater;
• wherein a time-dependent resistance of the inverse phase-change material element between the first and second electrodes is proportional to a time difference between first and second pulses generated by the respective first and second event pulse generators.

A system, comprising:

• a neuromorphic system comprising an artificial neural network, wherein the artificial neural network comprises neuron devices, and an array of synaptic devices which connect the neuron devices;
• wherein at least one neuron device comprises an inverse phase-change material device, wherein the inverse phase-change material device comprises:
• a phase-change element comprising phase-change material having an inverse resistivity characteristic;
• a first electrode disposed on a first surface of the phase-change element, wherein the first electrode comprises a first resistive heater element, and a first electrical insulating layer which electrically insulates the first resistive heater element from the first electrode and the phase-change element;
• and
• a second electrode disposed on a second surface of the phase-change element, wherein the second electrode comprises a second resistive heater element, and a second electrical insulating layer which electrically insulates the second resistive heater element from the second electrode and the phase-change element.