H10N 70/8418
Adapted for focusing electric field or current
Official title: {adapted for focusing electric field or current, e.g. tip-shaped}
H10N70/8418 (Adapted for focusing electric field or current) appears on 530 US grants and 604 published applications in this corpus.
Search patents in H10N- Granted patents
- 530
- Published applications
- 604
- Assignees
- 117
- Inventors
- 744
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 4 | 0 |
| 2001 | 3 | 0 |
| 2002 | 3 | 7 |
| 2003 | 7 | 8 |
| 2004 | 8 | 19 |
| 2005 | 10 | 15 |
| 2006 | 11 | 22 |
| 2007 | 7 | 22 |
| 2008 | 17 | 44 |
| 2009 | 11 | 40 |
| 2010 | 34 | 38 |
| 2011 | 50 | 46 |
| 2012 | 30 | 35 |
| 2013 | 44 | 26 |
| 2014 | 42 | 35 |
| 2015 | 33 | 29 |
| 2016 | 36 | 32 |
| 2017 | 23 | 19 |
| 2018 | 22 | 19 |
| 2019 | 19 | 23 |
| 2020 | 27 | 23 |
| 2021 | 20 | 22 |
| 2022 | 20 | 22 |
| 2023 | 15 | 21 |
| 2024 | 13 | 12 |
| 2025 | 13 | 16 |
| 2026 | 7 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Resistive switching device and fabrication method thereof5 May 2026US 12,622,184 B2United Microelectronics Corp.
- ReRAM device and method for manufacturing the same21 Apr 2026US 12,610,558 B2Shanghai Huali Microelectronics Corporation
- Resistive random access memory structure and manufacturing method thereof31 Mar 2026US 12,593,624 B2United Semiconductor (Xiamen) Co., Ltd.
- Resistive switching device and fabrication method thereof10 Mar 2026US 12,575,340 B2United Microelectronics Corp.
- Electrodes of semiconductor memory devices having corners of acute angles13 Jan 2026US 12,527,237 B2Globalfoundries Singapore Pte. Ltd.
- Resistive random access memory structure6 Aug 2026US 2026/0231694 A1United Semiconductor (Xiamen) Co., Ltd.
- Resistive switching device and fabrication method thereof25 Jun 2026US 2026/0182257 A1United Microelectronics Corp.
- Diagonal-type phase change memory cell7 May 2026US 2026/0130132 A1International Business Machines Corporation
- Resistive random access memory device with improved bottom electrode16 Apr 2026US 2026/0107701 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Rram structure and method of fabricating the same2 Apr 2026US 2026/0096356 A1United Microelectronics Corp.
Most cited
By later US patents
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000
- Phase change material memory device414US 6,512,241 B1Intel Corporation · 2003
- Phase change memory device employing thermally insulating voids286US 6,815,704 B1Silicon Storage Technology, Inc. · 2004