Resistive switching device and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsKai-Jiun Chang, Yu-Huan Yeh, Chuan-Fu Wang
Life of this patent
Estimating the term…
Abstract
A resistive switching device includes a substrate, a first dielectric layer on the substrate, a conductive via in the first dielectric layer, and a resistive switching structure embedded in an upper portion of the conductive via. The resistive switching structure includes a top electrode layer having a lower sharp corner, a resistive switching material layer disposed around the lower sharp corner of the top electrode layer, and a bottom electrode layer disposed between the resistive switching material layer and the upper portion of the conductive via.
Claims20
A resistive switching device, comprising:
- a substrate;
- a first dielectric layer on the substrate;
- a conductive via in the first dielectric layer;
- and
- a resistive switching structure embedded in an upper portion of the conductive via, wherein the resistive switching structure comprises a top electrode layer having a lower sharp corner, a resistive switching material layer wrapping around the lower sharp corner of the top electrode layer, and a bottom electrode layer disposed between the resistive switching material layer and the upper portion of the conductive via.
A method for forming a resistive switching device, comprising:
- providing a substrate;
- forming a first dielectric layer on the substrate;
- forming a conductive via in the first dielectric layer;
- and
- forming a resistive switching structure embedded in an upper portion of the conductive via, wherein the resistive switching structure comprises a top electrode layer having a lower sharp corner, a resistive switching material layer wrapping around the lower sharp corner of the top electrode layer, and a bottom electrode layer disposed between the resistive switching material layer and the upper portion of the conductive via.
Dependencies are inferred from the claim text.