Resistive switching device and fabrication method thereof

Abstract

A resistive switching device includes a substrate; a first dielectric layer on the substrate; a conductive via in the first dielectric layer; and a trench on an upper portion of the conductive via and in the first dielectric layer. The trench includes a first sidewall formed by the conductive via and a bottom surface formed by the conductive via and the first dielectric layer. A resistive switching structure is formed in the trench and contacts the first sidewall. The resistive switching structure includes a top electrode layer, a resistive switching material layer, and a bottom electrode layer disposed between the resistive switching material layer and the conductive via.

Dependencies are inferred from the claim text.