ReRAM device and method for manufacturing the same

A resistive random access memory (ReRAM) device, wherein the ReRAM device comprises a first resistance switching layer, a second resistance switching layer, a bottom electrode, and a top electrode;

• a bottom surface of the first resistance switching layer is connected with the bottom electrode, and a first groove is formed in a center of a top surface of the first resistance switching layer;
• the second resistance switching layer is formed on the first resistance switching layer, a center of a bottom surface of the second resistance switching layer is filled downwards into the first groove in the center of the top surface of the first resistance switching layer, and a top surface of the second resistance switching layer is connected with the top electrode;
• a material of the second resistance switching layer is more conductive than a material of the first resistance switching layer;
• a second groove is formed in a center of the top surface of the second resistance switching layer;
• a transverse dimension of the second groove is smaller than a transverse dimension of the first groove and the second groove is located right above the first groove;
• the top electrode is filled downwards into the second groove in the center of the top surface of the second resistance switching layer;
• the transverse dimension of the second groove is ⅓-⅔ of the transverse dimension of the first groove;
• and
• a thickness of the first resistance switching layer is 3 nm-30 nm.