Resistive random access memory structure
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsWEIKUN LIN, WEN YI TAN
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Abstract
The invention provides a resistive random access memory (RRAM) structure, which comprises a lower electrode located on a substrate, a resistance switching layer located on the lower electrode, and an upper electrode located on the resistance switching layer, wherein the resistance random access memory structure has a flat top surface and two inclined sidewalls when viewed from a cross section, and a maximum width of the resistance switching layer is greater than a maximum width of the upper electrode, wherein a maximum width of the lower electrode is smaller than the maximum width of the resistance switching layer.
Claims10
A resistive random access memory(RRAM)structure, comprising:
- a lower electrode located on a substrate;
- a resistance switching layer located on the lower electrode;
- and
- an upper electrode located on the resistance switching layer, wherein the resistive random access memory structure has a flat top surface and two inclined sidewalls when viewed from a cross section, and a maximum width of the resistance switching layer is greater than a maximum width of the upper electrode, wherein a maximum width of the lower electrode is smaller than the maximum width of the resistance switching layer.
Dependencies are inferred from the claim text.