Electrodes of semiconductor memory devices having corners of acute angles

A resistive random-access memory device, comprising:

• a dielectric layer comprising a top surface;
• a first bottom electrode of a monolithic bulk conductive structure partially in the dielectric layer;
• a second bottom electrode arranged immediately adjacent to and substantially parallel to the first bottom electrode, wherein the first bottom electrode and the second bottom electrode each comprises:
• a non-planar top surface over the top surface of the dielectric layer;
• a bottom surface arranged below the top surface of the dielectric layer;
• a first corner having a first acute angle;
• and
• a second corner having a second acute angle, the first corner of the second bottom electrode is arranged proximate to the first corner of the first bottom electrode, wherein the first corner and the second corner of the first bottom electrode and the first corner and the second corner of the second bottom electrode are arranged above the top surface of the dielectric layer;
• a switching layer arranged over the first bottom electrode and the second bottom electrode;
• and
• a first top electrode arranged over the switching layer, wherein the first corner of the first bottom electrode and the first corner of the second bottom electrode extend into and partially embed within the first top electrode.