Resistive random access memory structure and manufacturing method thereof
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsWeikun Lin, Wen Yi Tan
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Abstract
The invention provides a resistive random access memory (RRAM) structure, which comprises a lower electrode located on a substrate, a resistance switching layer located on the lower electrode, and an upper electrode located on the resistance switching layer, the resistive random access memory structure has a flat top surface and two inclined sidewalls as viewed from a sectional view, and the maximum width of the resistance switching layer is greater than the maximum width of the upper electrode.
Claims18
A resistive random access memory (RRAM) structure, comprising:
- a lower electrode located on a substrate;
- a resistance switching layer located on the lower electrode;
- and
- an upper electrode located on the resistance switching layer, wherein the resistance random access memory structure has a flat top surface and two inclined sidewalls when viewed from a cross section, and a maximum width of the resistance switching layer is greater than a maximum width of the upper electrode, wherein when viewed from a cross section, the resistance switching layer comprises a convex part, and the upper electrode has a flat top surface and two inclined sidewalls, and covers the convex part of the resistance switching layer.
A method for fabricating a resistive random access memory (RRAM) structure, comprising:
- forming a lower electrode on a substrate;
- forming a resistance switching layer on the lower electrode;
- and
- forming an upper electrode on the resistance switching layer, wherein the resistive random access memory structure has a flat top surface and two inclined sidewalls as viewed from a cross section, and a maximum width of the resistance switching layer is greater than a maximum width of the upper electrode, wherein when viewed from a cross section, the resistance switching layer comprises a convex part, and the upper electrode has a flat top surface and two inclined sidewalls, and covers the convex part of the resistance switching layer.
Dependencies are inferred from the claim text.