Diagonal-type phase change memory cell

A phase change memory cell comprising:

• a first dielectric material layer;
• a first electrode formed above the first dielectric material layer;
• a second dielectric material layer formed above the first electrode;
• a further dielectric material structure having a first sidewall surface portion abutting a side edge of the first dielectric material layer and a second sidewall surface portion abutting a side edge of the second dielectric material layer;
• a phase change material (PCM) layer having a first PCM layer portion formed on a top surface of said second dielectric material layer and having an angled PCM layer portion extending from the first PCM layer portion at an angle within said further dielectric material structure and having a second PCM layer portion extending from said angled PCM layer portion within said further dielectric material structure, said angled PCM layer having a slanted surface, wherein an edge of the first electrode electrically contacts the slanted surface of the angled PCM layer;
• and
• a second electrode having a first end electrically contacting the first PCM layer portion and having a second end electrically contacting the second PCM layer portion within said further dielectric material structure.

A method of forming a phase change memory cell comprising:

• providing a first dielectric material layer having a first portion of a first thickness and a second portion of a second thickness;
• forming a bottom electrode on top of the first portion of the first dielectric material layer, the bottom electrode having a surface that is coplanar with a surface of the second portion of the first dielectric material layer;
• forming a capping dielectric material layer on top said coplanar surface, said capping dielectric material layer of a width covering an interface between a sidewall edge of the bottom electrode and the second portion of the first dielectric material layer;
• forming a second dielectric material layer on top of the bottom electrode, wherein a length of said second dielectric material layer is of a length less than the length of the bottom electrode, said second dielectric material layer having a surface coplanar with a surface of the capping dielectric material layer;
• performing a reactive ion etch at a defined angle to form an opening extending through said capping layer and said first dielectric material layer, the opening having a continuous slanted sidewall surface comprising a slanted sidewall surface portion of said capping dielectric material layer and a slanted sidewall surface portion of said first dielectric material layer, the angled etch exposing an edge of the bottom electrode on the continuous slanted sidewall surface;
• depositing a phase change material (PCM) layer on top said continuous slanted sidewall surface to form an angled PCM layer, whereby the edge of the first electrode electrically contacts the slanted surface of the angled PCM layer.