Multi-state memory comprising tunnel junctions with topologically stabilized structures
AssigneesThales, Centre National De La Recherche Scientifique
InventorsManuel BIBES, Vincent GARCIA, Romain LEBRUN
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Abstract
A tunnel junction presenting a stack formed by a barrier and two electrodes, the barrier comprising a layer of ferroelectric material, so-called ferroelectric layer, the ferroelectric layer including at least one topologically protected structure presenting properties, the tunnel junction further including a unit for monitoring the properties of the at least one topologically protected structure.
Claims12
A tunnel junction presenting a stack formed by a barrier and two electrodes the barrier comprising a layer of a ferroelectric material, referred to as a ferroelectric layer, the barrier presenting a thickness less than or equal to 15 nanometers, the ferroelectric layer comprising at least one topologically protected structure presenting properties, the tunnel junction further comprising a control unit for monitoring the properties of said at least one topologically protected structure.
Dependencies are inferred from the claim text.