Electronic transistors

An electronic transistor comprising:

• a body comprising at least:
• an electrolyte structure;
• a channel provided in contact with the electrolyte structure;
• a gate provided in contact with the electrolyte structure;
• at least three contact elements configured to be connected to an external circuit, at least one of the contact elements, referenced as a Gate contact element, being separated from the electrolyte structure by the gate, and the other contact elements, referenced as a Source contact element and a Drain contact element, being interconnected and being separated from the electrolyte structure by the channel;
• the electrolyte structure comprising an oxygen ion conducting electrolyte structure, the oxygen ion conducting electrolyte structure comprising a BiMEVOX structure, Bi being Bismuth, ME being a Metal, V being Vanadium and OX being an OXide, the stoichiometry of the BiMEVOX structure being Bi.sub.4V.sub.2−xME.sub.xO.sub.11−δ, 0<x<1 and 0<δ<1.

A method of forming an electronic transistor, the method comprising:

• depositing a channel;
• forming a first contact element, referenced as a Source contact element, and a second contact element, referenced as a Drain contact element, onto the channel;
• depositing an electrolyte structure, the electrolyte structure comprising a BiMEVOX structure, where Bi is Bismuth, ME is a Metal, V is Vanadium and OX is an OXide;
• the stoichiometry of the BiMEVOX structure being Bi4V2-xMExO11-δ, 0<x<1 and 0<δ<1;
• depositing a gate onto the electrolyte structure;
• forming at least a third contact element, referenced as a Gate contact element, onto the gate.