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US 2026/0206499 A1Published application
Complex oxide memristive material, memristor comprising such material, and fabrication thereof
OwnerPetriina PATURI, Alejandro SCHULMAN +3inventors
InventorsPetriina PATURI, Alejandro SCHULMAN, Hannu HUHTINEN, Ville LÄHTEENLAHTI, Azar BEIRANVAND
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Abstract
A material for memristor has the chemical formula R(1-x)AxBO3, where R is one of Eu, Gd, Tb, Nd; A is one of Ca, Sr, Ba; B is one of Mn, Co, Ni; and x is larger than 0 but smaller than 1.
Claims8
A memristor comprising a piece of memristor material that constitutes at least one memristive connection between first and second contacts, wherein the memristor material has the chemical formula
- Gd(1-x)CaxMnO3, where x is larger than 0 but smaller than 1.
Dependencies are inferred from the claim text.