H10D 89/814
Involving a parasitic bipolar transistor triggered by the electrical biasing of the
Official title: {involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the FET, e.g. gate coupled transistors}
H10D89/814 (Involving a parasitic bipolar transistor triggered by the electrical biasing of the) appears on 154 US grants and 178 published applications in this corpus.
Search patents in H10D- Granted patents
- 154
- Published applications
- 178
- Assignees
- 108
- Inventors
- 366
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 1 |
| 2002 | 2 | 3 |
| 2003 | 3 | 2 |
| 2004 | 1 | 0 |
| 2005 | 1 | 3 |
| 2006 | 1 | 1 |
| 2007 | 1 | 0 |
| 2008 | 1 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 3 |
| 2011 | 0 | 4 |
| 2012 | 6 | 9 |
| 2013 | 5 | 7 |
| 2014 | 8 | 10 |
| 2015 | 7 | 5 |
| 2016 | 13 | 10 |
| 2017 | 5 | 9 |
| 2018 | 12 | 11 |
| 2019 | 12 | 10 |
| 2020 | 10 | 17 |
| 2021 | 13 | 11 |
| 2022 | 12 | 12 |
| 2023 | 9 | 18 |
| 2024 | 6 | 8 |
| 2025 | 14 | 14 |
| 2026 | 8 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Lateral DMOS design for ESD protection47US 6,064,249 ATexas Instruments Incorporated · 2000
- Low noise, high current-drive MOSFET structure for uniform serpentine-shaped poly-gate turn-on during an ESD event27US 5,955,763 AWinbond Electronics Corp. · 1999
- Electronic device, in particular for protection against electrostatic discharges, and method for protecting a component against electrostatic discharges20US 9,019,666 B2STMicroelectronics S.r.l. · 2015
- Semiconductor device12US 6,222,710 B1Mitsubishi Denki Kabushiki Kaisha · 2001
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