H10D 89/813
Specially adapted to provide an electrical current path other than the field-effect
Official title: {specially adapted to provide an electrical current path other than the field-effect induced current path}
H10D89/813 (Specially adapted to provide an electrical current path other than the field-effect) appears on 585 US grants and 618 published applications in this corpus.
Search patents in H10D- Granted patents
- 585
- Published applications
- 618
- Assignees
- 209
- Inventors
- 991
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 7 | 0 |
| 2000 | 4 | 0 |
| 2001 | 10 | 2 |
| 2002 | 11 | 10 |
| 2003 | 12 | 18 |
| 2004 | 9 | 17 |
| 2005 | 20 | 14 |
| 2006 | 10 | 8 |
| 2007 | 9 | 7 |
| 2008 | 6 | 8 |
| 2009 | 8 | 2 |
| 2010 | 7 | 7 |
| 2011 | 5 | 15 |
| 2012 | 15 | 24 |
| 2013 | 17 | 27 |
| 2014 | 36 | 37 |
| 2015 | 28 | 35 |
| 2016 | 47 | 43 |
| 2017 | 31 | 36 |
| 2018 | 40 | 43 |
| 2019 | 48 | 41 |
| 2020 | 33 | 51 |
| 2021 | 40 | 32 |
| 2022 | 37 | 32 |
| 2023 | 23 | 37 |
| 2024 | 22 | 32 |
| 2025 | 27 | 24 |
| 2026 | 18 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Circuit for preventing current backflow, chip, and electronic system6 Oct 2026US 12,757,498 B2Realtek Semiconductor Corp.
- Fin field-effect transistor, ESD protection circuit, filter circuit, and electronic device22 Sep 2026US 12,745,466 B2Huawei Technologies Co., Ltd.
- Method and system for a fin-based voltage clamp15 Sep 2026US 12,738,730 B2Semiconductor Components Industries, LLC
- Structures for an electrostatic discharge protection device1 Sep 2026US 12,727,256 B2GLOBALFOUNDRIES U. S. Inc.
- Integrated circuit with ESD protection circuit18 Aug 2026US 12,712,547 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit with esd protection circuit8 Oct 2026US 2026/0312588 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor integrated circuit device including plasma induced damage protection device8 Oct 2026US 2026/0314082 A1SK hynix Inc.
- Electrostatic discharge device in stacked nanosheet transistors27 Aug 2026US 2026/0255690 A1International Business Machines Corporation
- Semiconductor device27 Aug 2026US 2026/0255691 A1Vanguard International Semiconductor Corporation
- Semiconductor device and methods of formation23 Jul 2026US 2026/0215000 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- ESD protection circuit113US 6,897,536 B2Fujitsu Limited · 2005
- Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering109US 6,388,292 B1Winbond Electronics Corp. · 2002
- NMOS triggered NMOS ESD protection circuit using low voltage NMOS transistors82US 6,310,379 B1Texas Instruments Incorporated · 2001
- MOS structure with improved substrate-triggered effect for on-chip ESD protection58US 6,465,768 B1United Microelectronics Corp. · 2002
- Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering56US 6,002,156 AWinbond Electronics Corp. · 1999