Semiconductor device
AssigneeVanguard International Semiconductor Corporation
InventorsYeh-Jen HUANG, Jian-Hsing LEE, Li-Yang HONG, Yeh-Ning JOU
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate and drain contacts. The substrate has an active region. The active region includes a gate active region, a source active region and a drain active region. The source active region and the drain active region are located on opposite sides of the gate active region. The drain active region includes drain active segments that are spaced apart from each other. The drain contacts are disposed on a portion of the drain active segments. The number of drain active segments is equal to a first number, the number of drain contacts is equal to a second number, and the first number is not equal to the second number.
Claims20
A semiconductor device, comprising:
- a substrate having an active region, wherein the active region comprises:
- a gate active region;
- and
- a source active region and a drain active region are located on opposite sides of the gate active region, wherein the drain active region comprises drain active segments that are spaced apart from each other;
- and
- drain contacts disposed on a portion of the drain active segments, wherein the number of drain active segments is equal to a first number, the number of drain contacts is equal to a second number, and the first number is not equal to the second number.
Dependencies are inferred from the claim text.