Method and system for a fin-based voltage clamp

An integrated electronic device, comprising:

• a first FinFET, comprising:
• a first source contact;
• a first gate region;
• and
• a first neutralized region in contact with the first source contact and the first gate region, wherein the first neutralized region is defined by a first thickness;
• and
• a voltage clamp, comprising:
• a second FinFET, comprising:
• a second source contact;
• a second gate region;
• and
• a second neutralized region in contact with the second source contact and the second gate region, wherein the second neutralized region is defined by a second thickness and wherein the first thickness is greater than the second thickness.

A voltage clamp device, comprising:

• a FinFET, comprising:
• a first gate region;
• a first source contact configured to receive a voltage;
• a central region comprising a first neutralized region in contact with the first source contact and the first gate region;
• and
• a fin tip region comprising a second neutralized region in contact with the first source contact and the first gate region, wherein the FinFET is configured to conduct a current from the first source contact to the first gate region through the first neutralized region in response to the voltage reaching a threshold voltage.