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AssigneeSK hynix Inc.
InventorsInseon YOON, Seok HUH
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A semiconductor integrated circuit device for discharging plasma induced charges includes a protection transistor, a first discharging element and a second discharging element. The protection transistor is connected to a first wiring structure. At least one of a gate voltage and a plasma induced charge is provided to the protection transistor. The first discharging element is connected to a second wiring structure electrically connected to the first wiring structure. The first discharging element discharges a plasma induced negative charge introduced through the second wiring structure. When the plasma induced positive charge is introduced into the second discharge unit via a third wiring structure electrically connected to the second wiring structure, the second discharging element discharges the plasma induced positive charge. When a gate voltage is applied through the third wiring structure, the second discharging element is electrically isolated from the third wiring structure.
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device comprising:
Dependencies are inferred from the claim text.