H10D 89/811
Using fets as protective elements
Official title: {using FETs as protective elements}
H10D89/811 (Using fets as protective elements) appears on 2,766 US grants and 2,628 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,766
- Published applications
- 2,628
- Assignees
- 597
- Inventors
- 3,925
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 4 | 0 |
| 1991 | 8 | 0 |
| 1992 | 6 | 0 |
| 1993 | 5 | 0 |
| 1994 | 8 | 0 |
| 1995 | 17 | 0 |
| 1996 | 29 | 0 |
| 1997 | 33 | 0 |
| 1998 | 40 | 0 |
| 1999 | 72 | 0 |
| 2000 | 76 | 0 |
| 2001 | 74 | 17 |
| 2002 | 88 | 76 |
| 2003 | 85 | 80 |
| 2004 | 68 | 79 |
| 2005 | 84 | 99 |
| 2006 | 62 | 100 |
| 2007 | 82 | 86 |
| 2008 | 60 | 81 |
| 2009 | 53 | 82 |
| 2010 | 102 | 75 |
| 2011 | 67 | 67 |
| 2012 | 69 | 82 |
| 2013 | 74 | 88 |
| 2014 | 106 | 94 |
| 2015 | 89 | 112 |
| 2016 | 119 | 120 |
| 2017 | 116 | 134 |
| 2018 | 125 | 146 |
| 2019 | 156 | 139 |
| 2020 | 135 | 145 |
| 2021 | 124 | 119 |
| 2022 | 120 | 141 |
| 2023 | 124 | 129 |
| 2024 | 108 | 122 |
| 2025 | 103 | 133 |
| 2026 | 53 | 82 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Electrostatic discharge circuit, display substrate, and display device6 Oct 2026US 12,756,181 B2Boe Technology Group Co., Ltd.
- Electrostatic discharge (ESD) protection device with a targeted sub-fin etch depth6 Oct 2026US 12,757,497 B2Intel Corporation
- Circuit for preventing current backflow, chip, and electronic system6 Oct 2026US 12,757,498 B2Realtek Semiconductor Corp.
- Fin field-effect transistor, ESD protection circuit, filter circuit, and electronic device22 Sep 2026US 12,745,466 B2Huawei Technologies Co., Ltd.
- Method and system for a fin-based voltage clamp15 Sep 2026US 12,738,730 B2Semiconductor Components Industries, LLC
- Electrostatic discharge protection8 Oct 2026US 2026/0312402 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit with esd protection circuit8 Oct 2026US 2026/0312588 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device8 Oct 2026US 2026/0314081 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor integrated circuit device including plasma induced damage protection device8 Oct 2026US 2026/0314082 A1SK hynix Inc.
- Semiconductor Structure and Method Thereof24 Sep 2026US 2026/0293322 A1
Most cited
By later US patents
- Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance370US 5,897,348 ATexas Instruments - Acer Incorporated · 1999
- Disk drive comprising depletion mode MOSFETs for protecting a head from electrostatic discharge148US 7,009,820 B1Western Digital Technologies, Inc. · 2006
- Disk drive comprising depletion mode MOSFET for protecting a head from electrostatic discharge141US 7,046,488 B1Western Digital Technologies, Inc. · 2006
- Additional n-type LDD/pocket implant for improving short-channel NMOS ESD robustness127US 6,822,297 B2Texas Instruments Incorporated · 2004
- ESD protection circuit without overstress gate-driven effect116US 6,249,410 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2001