ESD protection circuit without overstress gate-driven effect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Dou Ker, Hun-Hsien Chang
Life of this patent
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Dou Ker, Hun-Hsien Chang
Estimating the term…
An ESD protection circuit is connected to an integrated circuit to dissipate an electrostatic charge from an ESD source placed in contact with two terminals of the integrated circuit to prevent damage to the integrated circuits. The ESD protection circuit has a ESD shunting circuit for shunting the electrostatic charge from integrated circuit. The ESD shunting circuit has a first port connected to one terminal of the integrated circuit, a second port connected to another terminal of the integrated circuit, and a third port. The ESD protection circuit additionally has an ESD detection circuit. The ESD detection circuit has a first input port connected to the one terminal of the integrated circuit, a second input port connected to the other terminal of the integrated circuit, and an output port connected to the third port of the ESD shunting circuit. When the ESD detection circuit detects the presence of the electrostatic charge from the ESD source, the ESD detection circuit generates an excess voltage at the third port that will damage the ESD shunting circuit. Finally The ESD protection circuit has a voltage clamping circuit connected between the third port of the ESD shunting circuit and one of the terminals of the integrated circuit to prevent the generation of the excess voltage at the third port of the ESD shunting circuit.
An ESD protection circuit connected between a first terminal and a second terminal of an integrated circuit for dissipating an electrostatic charge from an ESD source coupled from the first terminal to the second terminal to protect said integrated circuit from damage caused by exposure to extreme voltage from said ESD source, whereby said ESD protection circuit comprises:
An ESD protection circuit connected between a first power supply terminal and a second power supply terminal of an integrated circuit formed on a semiconductor substrate for dissipating an electrostatic charge from an ESD source in contact with the first power supply terminal to protect said integrated circuits from damage caused by exposure to extreme voltage from said ESD source, whereby said ESD protection circuit is comprising;
An ESD protection circuit connected between a first power supply terminal, a second power supply terminal, and an input/output signal terminal of an integrated circuit formed on a semiconductor substrate for dissipating an electrostatic charge from an ESD source connected to the input/output signal terminal to protect said integrated circuit from damage caused by exposure to extreme voltage from the ESD source, whereby said ESD circuit comprises:
An integrated circuit output driver circuit for transferring digital signals from internal circuits to an output pad connected to a transmission medium and for dissipating electrostatic charge from an ESD source connected to the output pad, whereby said output driver circuit is comprising:
Dependencies are inferred from the claim text.