Electrostatic discharge protection
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hui Chen, Chia-Jung Chang
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hui Chen, Chia-Jung Chang
Estimating the term…
Disclosed herein are related to a device for electrostatic discharge (ESD) protection. In one aspect, a device includes an ESD detector to detect an ESD at a pad. In one aspect, the device includes P-type transistors and N-type transistors connected in series with each other. In one aspect, the drive circuit is configured to provide an output signal to the pad. In one aspect, the device includes a first protection circuit operating in a power domain. In one aspect, in response to the ESD detected by the ESD detector, the first protection circuit is configured to disable the P-type transistors. In one aspect, the device includes a second protection circuit operating in another power domain. In one aspect, in response to the ESD detected by the ESD detector, the second protection circuit is configured to disable the N-type transistors.
A device, comprising:
A device comprising:
A device, comprising:
Dependencies are inferred from the claim text.