H10D 89/601
For devices having insulated gate electrodes
Official title: {for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs}
H10D89/601 (For devices having insulated gate electrodes) appears on 7,788 US grants and 7,406 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,788
- Published applications
- 7,406
- Assignees
- 1,142
- Inventors
- 9,476
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 8 | 0 |
| 1978 | 10 | 0 |
| 1979 | 4 | 0 |
| 1980 | 3 | 0 |
| 1981 | 8 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 7 | 0 |
| 1985 | 10 | 0 |
| 1986 | 10 | 0 |
| 1987 | 14 | 0 |
| 1988 | 20 | 0 |
| 1989 | 32 | 0 |
| 1990 | 30 | 0 |
| 1991 | 32 | 0 |
| 1992 | 36 | 0 |
| 1993 | 41 | 0 |
| 1994 | 49 | 0 |
| 1995 | 64 | 0 |
| 1996 | 102 | 0 |
| 1997 | 108 | 0 |
| 1998 | 142 | 0 |
| 1999 | 166 | 0 |
| 2000 | 153 | 0 |
| 2001 | 146 | 50 |
| 2002 | 202 | 199 |
| 2003 | 221 | 194 |
| 2004 | 182 | 202 |
| 2005 | 183 | 259 |
| 2006 | 177 | 258 |
| 2007 | 184 | 250 |
| 2008 | 166 | 258 |
| 2009 | 174 | 261 |
| 2010 | 269 | 240 |
| 2011 | 229 | 217 |
| 2012 | 231 | 276 |
| 2013 | 272 | 290 |
| 2014 | 315 | 340 |
| 2015 | 328 | 380 |
| 2016 | 379 | 365 |
| 2017 | 363 | 376 |
| 2018 | 352 | 384 |
| 2019 | 408 | 357 |
| 2020 | 343 | 360 |
| 2021 | 309 | 317 |
| 2022 | 303 | 347 |
| 2023 | 272 | 354 |
| 2024 | 280 | 328 |
| 2025 | 278 | 327 |
| 2026 | 162 | 217 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 89/811Using fets as protective elements2,766
- H10D 89/611Using diodes as protective elements2,304
- H10D 89/711Using bipolar transistors as protective elements1,873
- H10D 89/911Using passive elements as protective elements950
- H10D 89/921Characterised by the configuration of the interconnections connecting the protective arrangements579
- H10D 89/931Characterised by the dispositions of the protective arrangements494
Recent patents
- Electrostatic discharge circuit, display substrate, and display device6 Oct 2026US 12,756,181 B2Boe Technology Group Co., Ltd.
- Diode structure for direct backside contact, backside power delivery network6 Oct 2026US 12,757,457 B2QUALCOMM Incorporated
- Insulated-gate bipolar transistor device as well as a data transmission system implementing such insulated-gate bipolar transistor device6 Oct 2026US 12,757,496 B2Nexperia B. V.
- Electrostatic discharge (ESD) protection device with a targeted sub-fin etch depth6 Oct 2026US 12,757,497 B2Intel Corporation
- Circuit for preventing current backflow, chip, and electronic system6 Oct 2026US 12,757,498 B2Realtek Semiconductor Corp.
- Semiconductor switch with degradation detection8 Oct 2026US 2026/0309774 A1Infineon Technologies AG
- Electrostatic discharge protection8 Oct 2026US 2026/0312402 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit with esd protection circuit8 Oct 2026US 2026/0312588 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device8 Oct 2026US 2026/0314081 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- FinFET body contact and method of making same412US 8,735,993 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance370US 5,897,348 ATexas Instruments - Acer Incorporated · 1999
- System-in packages334US 8,503,186 B2Megica Corporation · 2013
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- ESD/antenna diodes for through-silicon vias237US 8,264,065 B2Synopsys, Inc. · 2012