H10D 89/931
Characterised by the dispositions of the protective arrangements
Official title: {characterised by the dispositions of the protective arrangements}
H10D89/931 (Characterised by the dispositions of the protective arrangements) appears on 494 US grants and 600 published applications in this corpus.
Search patents in H10D- Granted patents
- 494
- Published applications
- 600
- Assignees
- 181
- Inventors
- 1,098
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 4 |
| 2006 | 1 | 2 |
| 2007 | 1 | 2 |
| 2008 | 3 | 3 |
| 2009 | 1 | 2 |
| 2010 | 3 | 4 |
| 2011 | 1 | 10 |
| 2012 | 6 | 9 |
| 2013 | 10 | 19 |
| 2014 | 13 | 30 |
| 2015 | 28 | 30 |
| 2016 | 29 | 31 |
| 2017 | 32 | 35 |
| 2018 | 31 | 42 |
| 2019 | 38 | 48 |
| 2020 | 42 | 40 |
| 2021 | 43 | 64 |
| 2022 | 49 | 56 |
| 2023 | 48 | 59 |
| 2024 | 48 | 46 |
| 2025 | 36 | 43 |
| 2026 | 31 | 21 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device15 Sep 2026US 12,740,157 B2Nuvoton Technology Corporation Japan
- Two-dimensional power clamp cell8 Sep 2026US 12,733,263 B2Mediatek Inc.
- Display device having an embedded shielding layer flexible substrate8 Sep 2026US RE51,027 E1Samsung Display Co., Ltd.
- Display device25 Aug 2026US 12,720,862 B2Samsung Display Co., Ltd.
- Semiconductor protection devices with high area efficiency25 Aug 2026US 12,720,871 B2Texas Instruments Incorporated
- Semiconductor integrated circuit device including plasma induced damage protection device8 Oct 2026US 2026/0314082 A1SK hynix Inc.
- Semiconductor device17 Sep 2026US 2026/0282429 A1Kabushiki Kaisha Toshiba
- Power fet with fail-open safety feature10 Sep 2026US 2026/0271407 A1Microchip Technology Incorporated
- Semiconductor device27 Aug 2026US 2026/0255667 A1United Microelectronics Corp.
- Integrated circuit comprising at least one esd protecting device16 Jul 2026US 2026/0206325 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Integrated circuits with multiple I/O regions26US 8,549,447 B22013
- Semiconductor device and a method of manufacturing the same25US 7,102,223 B1Hitachi ULSI Systems Co., Ltd. · 2006
- ESD protection circuit cell18US 9,069,924 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Semiconductor device and a method of manufacturing the same16US 7,759,804 B2Hitachi ULSI Systems Co., Ltd. · 2010
- Thin film transistor array substrate, method of fabricating the same, liquid crystal display panel having the same and fabricating method thereof14US 7,336,336 B2LG. Philips Co., Ltd. · 2008