H10D 89/711
Using bipolar transistors as protective elements
Official title: {using bipolar transistors as protective elements}
H10D89/711 (Using bipolar transistors as protective elements) appears on 1,873 US grants and 1,794 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,873
- Published applications
- 1,794
- Assignees
- 392
- Inventors
- 1,937
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 10 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 14 | 0 |
| 1995 | 15 | 0 |
| 1996 | 26 | 0 |
| 1997 | 27 | 0 |
| 1998 | 33 | 0 |
| 1999 | 43 | 0 |
| 2000 | 27 | 0 |
| 2001 | 31 | 10 |
| 2002 | 46 | 46 |
| 2003 | 48 | 43 |
| 2004 | 56 | 48 |
| 2005 | 41 | 57 |
| 2006 | 50 | 45 |
| 2007 | 37 | 43 |
| 2008 | 40 | 60 |
| 2009 | 43 | 66 |
| 2010 | 54 | 61 |
| 2011 | 63 | 57 |
| 2012 | 57 | 91 |
| 2013 | 83 | 90 |
| 2014 | 103 | 93 |
| 2015 | 96 | 89 |
| 2016 | 100 | 90 |
| 2017 | 87 | 76 |
| 2018 | 83 | 82 |
| 2019 | 95 | 64 |
| 2020 | 67 | 88 |
| 2021 | 68 | 72 |
| 2022 | 69 | 81 |
| 2023 | 61 | 92 |
| 2024 | 72 | 104 |
| 2025 | 72 | 75 |
| 2026 | 44 | 71 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Insulated-gate bipolar transistor device as well as a data transmission system implementing such insulated-gate bipolar transistor device6 Oct 2026US 12,757,496 B2Nexperia B. V.
- Electrostatic discharge (ESD) protection device29 Sep 2026US 12,751,092 B2Amazing Microelectronic Corp.
- ESD protection device22 Sep 2026US 12,745,463 B2Infineon Technologies AG
- Electrostatic discharge (ESD) protection circuit including an avalanche semiconductor controlled rectifier (SCR) with parallel connected static trigger control circuit (TCC)22 Sep 2026US 12,745,464 B2STMicroelectronics International N. V.
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor switch with degradation detection8 Oct 2026US 2026/0309774 A1Infineon Technologies AG
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device8 Oct 2026US 2026/0314081 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including lateral and vertical esd protection devices24 Sep 2026US 2026/0293321 A1Infineon Technologies AG
- Semiconductor device and can protection circuit including same17 Sep 2026US 2026/0282560 A1SK keyfoundry Inc.
Most cited
By later US patents
- 3-D CMOS-on-SOI ESD structure and method172US 5,923,067 AInternational Business Machines Corporation · 1999
- Electrostatic discharge protection circuit for integrated circuits123US 5,400,202 AHewlett-Packard Company · 1995
- Electrostatic discharge protection circuit121US 5,012,317 ATexas Instruments Incorporated · 1991
- Low voltage triggering semiconductor controlled rectifiers113US 5,465,189 ATexas Instruments Incorporated · 1995
- Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits111US 5,576,557 AUnited Microelectronics Corp. · 1996