Semiconductor device and can protection circuit including same

A semiconductor device comprising:

• a first bidirectional silicon controlled rectifier (SCR) device, a second bidirectional SCR device, and a third bidirectional SCR device, each disposed on a single chip,
• wherein each of the first, second, and third bidirectional SCR devices comprises:
• a first well region of a second conductivity type formed at a central portion;
• a second well region and a third well region of a first conductivity type symmetrically formed on opposite sides of the first well region;
• a deep well region of the second conductivity type formed beneath the first well region;
• and
• a doped region of the first conductivity type and a doped region of the second conductivity type formed in the second well region and the third well region.

A controller area network (CAN) protection circuit comprising:

• a first bidirectional SCR device, a second bidirectional SCR device, and a third bidirectional SCR device;
• and
• a CAN receiver having a VCC terminal, a CAN high terminal, a CAN low terminal, and a ground (GND) terminal,
• wherein the first bidirectional SCR device is connected between the CAN high terminal and the GND terminal;
• wherein the second bidirectional SCR device is connected between the CAN high terminal and the CAN low terminal;
• and
• wherein the third bidirectional SCR device is connected between the CAN low terminal and the GND terminal.

A semiconductor device comprising:

• a first bidirectional silicon controlled rectifier (SCR) device, a second bidirectional SCR device, and a third bidirectional SCR device, each disposed on a single chip;
• a first well region of a second conductivity type formed at a central portion of the chip;
• a second well region and a third well region of a first conductivity type symmetrically formed on respective left and right sides of the first well region;
• a doped region of the first conductivity type formed in each of the second and third well regions;
• and
• doped regions of the second conductivity type formed on opposite sides of the doped region of the first conductivity type in each of the second and third well regions,
• wherein a controller area network (CAN) high terminal is connected to the doped region of the first conductivity type and the doped regions of the second conductivity type in the second well region, and
• wherein a CAN low terminal is connected to the doped region of the first conductivity type and the doped regions of the second conductivity type formed in the third well region.