Electrostatic discharge (ESD) protection device
AssigneeAmazing Microelectronic Corp.
InventorsChih-Wei Chen, Che-Hao Chuang, Kun-Hsien Lin
Life of this patent
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Abstract
An electrostatic discharge protection device includes a P-type substrate, an N-type well, a first P-type heavily-doped area, an N-type doped area, and a first N-type heavily-doped area. The N-type well is formed in the P-type substrate. The first P-type heavily-doped area is formed in the N-type well. The N-type doped area and the first N-type heavily-doped area are formed in the P-type substrate. The N-type doped area is coupled to the N-type well through an external conductive wire decoupled to the first P-type heavily-doped area. Alternatively, the P-type substrate and the N-type well are respectively replaced with an N-type substrate and a P-type well.
Claims16
An electrostatic discharge (ESD) protection device comprising:
- a P-type substrate;
- an N-type well formed in the P-type substrate;
- a first P-type heavily-doped area formed in the N-type well;
- an N-type doped area and a first N-type heavily-doped area formed in the P-type substrate, wherein the N-type doped area is coupled to the N-type well through an external conductive wire and the external conductive wire is decoupled to the first P-type heavily-doped area;
- and
- a second P-type heavily-doped area formed in the P-type substrate, wherein the N-type doped area is formed between the first N-type heavily-doped area and the second P-type heavily-doped area;
- wherein the first P-type heavily-doped area is coupled to a first pin, the first pin is decoupled to the external conductive wire, and the first N-type heavily-doped area and the second P-type heavily-doped area are coupled to a second pin;
- wherein the first N-type heavily-doped area is formed between the N-type doped area and the N-type well.
An electrostatic discharge (ESD) protection device comprising:
- an N-type substrate;
- a P-type well formed in the N-type substrate;
- a first P-type heavily-doped area formed in the N-type substrate;
- and
- an N-type doped area and a first N-type heavily-doped area formed in the P-type well, wherein the N-type doped area is coupled to the N-type substrate through an external conductive wire and the external conductive wire is decoupled to the first P-type heavily-doped area.
Dependencies are inferred from the claim text.