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US 5,923,067 AGranted
3-D CMOS-on-SOI ESD structure and method
AssigneeInternational Business Machines Corporation
InventorSteven Howard Voldman
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Abstract
Three-dimensional ESD structures are constructed in SOI technology that utilize both bulk devices and thin film SOI devices.
Claims9
A three-dimensional (3-D) CMOS-on-SOI (Complementary-Metal-Oxide-Semiconductor on Silicon-on-Insulator) electrostatic discharge (ESD) structure comprising:
- an SOI substrate including a silicon thin film layer separated from a bulk silicon substrate by an insulator;
- an integrated circuit structure formed in the thin film of said SOI substrate;
- and
- an ESD network formed in the bulk silicon substrate underneath said integrated circuit structure.
1 more element
Dependencies are inferred from the claim text.