H10D 89/611
Using diodes as protective elements
Official title: {using diodes as protective elements}
H10D89/611 (Using diodes as protective elements) appears on 2,304 US grants and 2,458 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,304
- Published applications
- 2,458
- Assignees
- 527
- Inventors
- 3,755
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 4 | 0 |
| 1991 | 4 | 0 |
| 1992 | 9 | 0 |
| 1993 | 8 | 0 |
| 1994 | 11 | 0 |
| 1995 | 11 | 0 |
| 1996 | 28 | 0 |
| 1997 | 32 | 0 |
| 1998 | 24 | 0 |
| 1999 | 34 | 0 |
| 2000 | 37 | 0 |
| 2001 | 29 | 24 |
| 2002 | 47 | 62 |
| 2003 | 62 | 37 |
| 2004 | 41 | 43 |
| 2005 | 39 | 55 |
| 2006 | 31 | 58 |
| 2007 | 29 | 53 |
| 2008 | 34 | 51 |
| 2009 | 33 | 52 |
| 2010 | 56 | 63 |
| 2011 | 43 | 57 |
| 2012 | 63 | 69 |
| 2013 | 72 | 87 |
| 2014 | 84 | 112 |
| 2015 | 110 | 144 |
| 2016 | 135 | 152 |
| 2017 | 133 | 151 |
| 2018 | 138 | 136 |
| 2019 | 149 | 141 |
| 2020 | 123 | 131 |
| 2021 | 116 | 133 |
| 2022 | 115 | 121 |
| 2023 | 101 | 156 |
| 2024 | 104 | 137 |
| 2025 | 123 | 144 |
| 2026 | 67 | 89 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Diode structure for direct backside contact, backside power delivery network6 Oct 2026US 12,757,457 B2QUALCOMM Incorporated
- Circuit for preventing current backflow, chip, and electronic system6 Oct 2026US 12,757,498 B2Realtek Semiconductor Corp.
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transient voltage suppressor structure having multiple discharging paths15 Sep 2026US 12,740,156 B2Amazing Microelectronic Corp.
- Semiconductor structure and method of preventing charging damage thereof1 Sep 2026US 12,727,255 B2United Microelectronics Corp.
- Integrated circuit device8 Oct 2026US 2026/0314081 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor integrated circuit device including plasma induced damage protection device8 Oct 2026US 2026/0314082 A1SK hynix Inc.
- Electrostatic discharge (esd) circuits using front end (fe) diodes and metal-in-metal (mim) via fuses in interconnect layers1 Oct 2026US 2026/0305316 A1Intel Corporation
- Bidirectional electrostatic discharge detector1 Oct 2026US 2026/0305360 A1Micron Technology, Inc.
- Semiconductor Structure and Manufacturing Method Thereof24 Sep 2026US 2026/0293320 A1Diodes Incorporated
Most cited
By later US patents
- FinFET body contact and method of making same412US 8,735,993 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- ESD/antenna diodes for through-silicon vias237US 8,264,065 B2Synopsys, Inc. · 2012
- ESD protection structure using LDMOS diodes with thick copper interconnect179US 5,468,984 ATexas Instruments Incorporated · 1995
- 3-D CMOS-on-SOI ESD structure and method172US 5,923,067 AInternational Business Machines Corporation · 1999